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Collector emitter saturation voltage

Collector Emitter Voltage - an overview ScienceDirect Topic

Ein für einen Silizium-Transistor üblicher Wert ist UCE sat = 0,2 V, bei Darlington-Transistoren um 0,9 bis 2,5 V. Die Kollektor-Emitter-Schicht verhält sich wie eine Hochvolt-Zenerdiode. Der Kennwert für UCE max wird im Datenblatt eines Transistors vermerkt. Oberhalb U CE max schlägt der Transistor durch Because the charge carriers injected from the base effectively eliminate the depletion zone between the collector and emitter. The collector current doesn't have to overcome the P-N junction potential because the base current has neutralized it. <.. Saturation voltage comes into play when the transistor is being driven hard ON, not when it is off. When driven hard on, ideally a transistor would have zero volts from collector to emitter -- it would look like a switch that is closed Collector-emitter saturation voltage1) IC = 100 mA, IB = 10 mA VCEsat - - 0.25 V Base-emitter voltage1) IC = 100 mA, VCE = 1 V VBE(ON) - - 1.2 AC Characteristics Transition frequency IC = 20 mA, VCE = 5 V, f = 20 MHz fT - 100 - MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb - 7 - pF 1Pulse test: t < 300µs; D < 2

The Collector to emitter voltage at saturation is the ratio of voltage across base-emitter junction and voltage across the base-collector junction at saturation mode and is represented as VCESat = VBE-VBC or collector_to_emitter_voltage = Voltage across the base-emitter junction-Voltage across base-collector junction I think that Collector-Emitter Saturation Voltage listed in the datasheet is the voltage drop across collector-emitter when the transistor is fully saturated. It is dependent on collector current. For example, the datasheet of 2N2222 reports VCE(sat) = 400mV for IC = 150 mA and IB = 15 mA and VCE(sat) = 1.6V when IC = 500 mA and IB = 50 mA collector−emitter voltage drops to the saturation voltage. In most cases a Digital Transistor will be used as a switch. There are four parameters that characterize this operation: Input Voltage (off), Input Voltage (on), Output Voltage (on), and Output Voltage (off). The first parameter, Input Voltage

Collector emitter saturation voltage ? - Mikrocontroller

It can be seen that the Collector-emitter voltage is in anti-phase (-180 o) with the collector current. As the Base current Ib changes in a positive direction from 50μA to 80μA, the Collector-emitter voltage, which is also the output voltage decreases from its steady state value of 5.8 volts to 2.0 volts Your datasheet says that the collector-emitter saturation voltage is no more than 0.5V at a collector current of 2A. The saturation voltage at other currents can be obtained from the Collector-emitter saturation voltage diagram in the datasheet or measured experimentally In what is called active mode, the base-emitter voltage and collector-base voltage are positive, forward biasing the emitter-base junction and reverse-biasing the collector-base junction. In this mode, electrons are injected from the forward biased n-type emitter region into the p-type base where they diffuse as minority carriers to the reverse-biased n-type collector and are swept away by the electric field in the reverse-biased collector-base junction This is called the collector-to-emitter (V CE) saturation voltage: V CE(sat) = 0.2 V. Current-Voltage Characteristics. In cutoff mode, the transistor is inactive; current cannot flow from collector to emitter. In forward active mode, increases in base current create increases in collector current according to the relationship I C = βI B

Transistor datasheets will define this voltage as CE saturation voltage V CE(sat)-- a voltage from collector to emitter required for saturation. This value is usually around 0.05-0.2V. This value means that V C must be slightly greater than V E (but both still less than V B) to get the transistor in saturation mode. Cutoff Mode. Cutoff mode is the opposite of saturation. A transistor in cutoff. This report presents a detailed method for the measurement of collector-emitter saturation voltage. The method which is included in the Appendix is proposed for standardization. The report also contains a description of the laboratory confirmation of the method and a discussion of the precautions to be taken to assure repeatability of the measurement

Bipolar transistor biasing - Wikipedia

Collector-emitter saturation voltage as a function of collector current; typical values mgw170 I (m )-1.4-0.8 0.6-0.4-0.2-1.0-1.2-10-1-1 -10 -102-103-104 VBEsat (V) (1) (2) (3) IC/IB = 10 (1) Tamb = -55 °C (2) Tamb = 25 °C (3) Tamb = 150 °C Fig. 8. Base-emitter saturation voltage as a function of collector current; typical values PBSS5350ZProduct data sheet All information provided in this. Collector−Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) VCE(sat) − − 0.3 1.0 Vdc Base−Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) VBE(sat) 0.6 − 1.2 2.0 Vdc SMALL−SIGNAL CHARACTERISTICS Magnitude of Small−Signal Current Gain (IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz) |hfe| 2.5 − Collector-emitter saturation voltage VCE(sat) IC = 500mA, IB = 50mA - 200 500 mV DC current gain hFE VCE = 3V, IC = 100mA 120 - 390 - Transition frequency fT VCE = 10V, IE = -50mA, f = 100MHz - 120 - MHz Output capacitance Cob VCB = 10V, IE = 0A, f = 1MHz - 7.5 - pF hFE values are calssified as follows : rank Q R - - - hFE 120-270 180-390 - - - *1 Each terminal mounted on a reference land www.

Even if the resistance of the IGBT element is increased by twice, the saturation voltage between the collector and the emitter is not increased by twice. Même si la résistance de l'élément IGBT est multipliée par deux, la tension de saturation entre le collecteur et l'émetteur ne l'est pas collector-emitter saturation voltageの意味や使い方 コレクター-エミッター飽和電圧 - 約1174万語ある英和辞典・和英辞典。発音・イディオムも分かる英語辞書 Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High energy efficiency due to less heat generation AEC-Q101 qualified Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications Loadswitch Battery-driven devices Power management Charging circuits Power. Collector Emitter Saturation Voltage Vce(on) = 2V . Compare Selected Compare (0) Results: 1 2 3. per page. Extended Attributes Attributes. Close Add properties to the table. Select the properties you would like to see added to the columns at the end of the table. Select All . DC Collector Current. Collector-Emitter Saturation Voltage VCE(sat) —— 0.2 VIF = 20 mA, IC = 1 mA Response Time (Rise) t r —4 18 µsVCC = 2V, IC = 2 mA Response Time (Fall) t f —3 18 µsRL = 100 Ω Isolation Resistance Riso 5 × 1010 1 × 1011 — Ω DC 500V, 40% ~ 60% RH Floating Capacitance Cf — 0.6 1.0 pF V = 0, f = 1 MHz . Broadcom AV02-0774EN 5 HCPL-181 Data Sheet Phototransistor Optocoupler SMD Mini.

What is the difference between Collector-Emitter and

IGBT collector to emitter saturation voltage. Thread starter mermerzac; Start date Jun 8, 2012; Search Forums; New Posts; M. Thread Starter. mermerzac. Joined Feb 9, 2012 30. Jun 8, 2012 #1 Hi all, I'm looking through datasheet of IGBT. May I know what is meant by collector to emitter saturation voltage? Like Reply. Scroll to continue with content. praondevou. Joined Jul 9, 2011 2,942. Jun 8. Transistor Fundamentals: Collector Saturation and Collector-Emitter Cutoff. By Patrick Hoppe. Students read about the concepts of saturation and cutoff. They view diagrams that illustrate the interaction of the load line and the family of curves. Download Object

  1. In saturation the collector-emitter voltage, , is less than the . Typically, the at saturation is about 0.2 Volts. VCE VBE VCE 22.071/6.071 Spring 2006, Chaniotakis and Cory 8 . Digital Logic. The circuit on Figure 10 shows the fundamental inverter circuit. IC IB VCC vi Vo RB RC Figure 10. Basic BJT inverter circuit If the voltage is zero (low) the transistor is in the cutoff region, the.
  2. Saturation (for a BJT) is defined in several ways, but generally it relates to the collector-emitter voltage V CE. Here is an LTSpice simulation of a 2N4401 transistor driving a 160 ohm load with a 5V supply, which corresponds to about 30 mA collector current with the transistor turned ON
  3. An emitter-coupled circuit is biased with a current source, which can be designed such that the collector voltage cannot be less than the base voltage. Example 5.3 Calculate the saturation voltage of a bipolar transistor biased with a base current of 1 mA and a collector current of 10 mA
  4. The input and Base are connected to VCC Base-Emitter voltage VBE > 0.7v Base-Emitter junction is forward biased Base-Collector junction is forward biased Transistor is fully-ON (saturation region) Max Collector current flows ( IC = Vcc/RL) VCE = 0 (ideal saturation) VOUT = VCE = 0 Transistor.
  5. ation The base-emitter voltage V BE can be considered to be the controlling variable in.
  6. al. What The.

Kollektor-Emitter-Spannung bei Sättigung Taschenrechner

Fig. 6 Typical Collector-Emitter Saturation Voltage vs. Collector Current 1 0.01 0.1 1 V, E C O L L E C T O-E M I T T E R S A T U R A T I O N C E (S A T) V O L T A G E (V) T = -55°C A I /I = 20 CB T = 25°C A T = 85°C A T = 125°C A T = 150°C A 0.1 1 10 100 1,000 I , COLLECTOR CURRENT (mA) C Fig. 7 Typical Base-Emitter Saturation Voltage vs. Collector Current 0.2 0.4 0.6 0.8 1.2 V, B A S E. Collector-emitter voltage drop at saturation is generally expected to be 0.3 volts or less, but this figure is, of course, dependent on the specific type of transistor. Low voltage transistors, low V CE, show lower saturation voltages. The saturation voltage is also lower for a higher base drive current. Base-emitter forward voltage drop, V BE, is similar to that of an equivalent diode, ≅0.7. Collector-emitter saturation voltage V CE(sat) I C=2A, I B= 0.2A 0.5 V Base-emitter saturation voltage V BE(sat) I C=2A, I B= 0.2A 1.5 V Transition frequency f T V CE=5 V, I C=0.1mA f = 10MHz 50 MHz CLASSIFICATION OF hFE(1) 1 2 3 TO-126 1. EMITTER 2. COLLECTOR 3. BASE R O Y GR Range 60-120 100-200 160-320 200-400 Ran

In active region, the emitter junction (JE) is forward biased and the collector junction (JC) is reverse biased. The typical base-emitter voltages (VBE) for both npn and pnp transistors are as follows: If the transistor is made up of a silicon material, the base-emitter voltage (VBE) will be 0.7 V. If the transistor is made up of a germanium. - collector-emitter saturation voltage - v ta - ambient temperature - °c-25 25 75 0.02 .16-55 0 50 100 0.10 8 ic = 2.5 ma = 10 ma 0.04 0.06 0.08 0.12 0.14 i ce o - collector dark current - a 10-13-30 0 420 0 80 100 cny17-1 fig 9 ta - ambient temperature - °c vce = 10 v 10-12 10-11 10-10 10-9 10-8 10-7 10-6 60 response time - µs rl - load resistance - kΩ 0.5 1 0.05 0. We report the investigation of gamma irradiation effects on the collector-emitter saturation voltage of InGaP/GaAs heterojunction bipolar transistors (HBTs). It is found that the saturation voltage increases by more than 0.1 V after exposure to gamma irradiation with a total dose of 10 Mrad(Si) and subsequent annealing at room temperature Collector-Emitter Saturation Voltage VCE(sat) Rev.3-2-12012020 MCCSEMI.COM Curve Characteristics 3/4 2N3904 0 16 20 0 20 40 60 80 100 Common Emitter TA=25°C Collector Current (mA) 4 12 Collector-Emitter Voltage (V) Fig. 1 - Static Characteristics 500μA 450μA 400μA 350μA 300μA 250μA 200μA 150μA 100μA IB=50μA 0.1 100 100 200 300 0 400 Common Emitter VCE= 1V TA=100°C DC Current Gain. Collector−Emitter Saturation Voltage (Note 3) (IC = 10 mA, IB = 0.5 mA) (IC = 0.10 A, IB = 0.010 A) (IC = 0.5 A, IB = 0.050 A) (IC = 1.0 A, IB = 0.1 A) VCE(sat) 0.015 0.040 0.115 0.220 V Base−Emitter Saturation Voltage (Note 3) (IC = 0.5 A, IB = 50 mA) VBE(sat) 1.1 V Base−Emitter Turn−on Voltage (Note 3) (IC = 0.5 A, VCE = 2.0 V) VBE(on) 0.90 V Cutoff Frequency (IC = 100 mA, VCE = 2.0.

If I have an NPN transistor and let's say we set the base voltage higher than the collector voltage.(Emitter is connected to GND).There are 2 currents flowing in the base because we have two forward biased junctions inside the diode , 1 is the current flowing from emitter to base and 1 is the current flowing from collector to base. What I don't understand is why the transistor acts like a. Importance of Vce (Collector, Emitter) The voltage Vce is very important in checking whether the transistor is: When Vce = Vcc, the transistor is in cut-off i. e. it is turned OFF. When Vce = 0, the transistor is in saturation, i. e. it is turned fully ON. When Vce is less than zero, means negative, the transistor is said to be well into. Collector emitter saturation voltage: 0.25V; Dc Current gain:60; For further details download datasheet. 2N3906 DataSheet Where and How to Use 2N3906 Transistor. 2N3906 transistor is generally used for high-speed switching and amplification purpose. Either it is used for switching or amplification it works in three modes of operation. Active region; Saturation region; Cut-off region; In the. Collector-Emitter Saturation Voltage, V CE(sat) (V) I C 0.5mA 1mA 3mA 5mA 7mA = 10mA Ta = 25ºC Figure 19 Frequency Response Figure 20 CMR Test Circuit-8-6-4-2 0 1 10 100 Frequency, f (kHz) Vo, (dB) Vcc = 5V IC = 2mA Ta= 25ºC RL= 100: 1k: R Vo L Vcc VCM VCM dV/dt Vo Vcp Vnp 470: 9V (High Voltage Pulse) V cp: Voltage that is generated by the displacement current in floating capacitance between. Collector Emitter Saturation Voltage Derating Curve DC Current Gain Base Emitter Saturation Voltage BUL903ED 3/6. Reverse Biased SOA Resistive Load Switching Test Circuit Energy Rating Test Circuit BUL903ED 4/6. DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 D1 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14.

Kollektor-Emitter-Spannung - Wikipedi

Why is the collector to emitter voltage (VCE) 0

Assuming the collector is at a lower voltage than the base, the emitter-collector current is 100 times the base current. So, this transistor has a beta (current gain) of 100. Moving the collector voltage higher or lower won't have any effect as long as it's lower than the base voltage. This is forward active mode. A transistor is often considered to be in saturation mode when the collector is. Collector−Emitter Saturation Voltage VCE(sat) IC = 4A, IB = 400mA − − 1.1 V IC = 10A, IB = 3.3A − − 3.0 V Base−Emitter ON Voltage VBE(on) IC = 4A, VCE = 4V − − 1.5 V Second Breakdown Second Breakdown Collector Current with Base Forward Biased Is/b VCE = 40V, t = 1.0s; Nonrepetitive 2.87 − − A Dynamic Characteristics Current Gain−Bandwidth Product fT IC = 500mA, VCE = 10V. Fig.6 Collector-emitter saturation voltage vs. collector current (ΙΙ) COLLECTOR SATURATION VOLTAGE : V CE(sat) (V) COLLECTOR CURRENT : IC (mA) 1 5 10 20 50 100 200 5001002 0 0.02 0.01 0.05 0.1 0.2 0.5 lC/lB =10 Ta =100 °C 25°C −40°C Fig.7 Gain bandwidth product vs. emitter current EMITTER CURRENT : IE(mA) TRANSITION FREQUENCY : f T (MHz)-1 -100 200 20 100 50-2 -5 -10 -20 -50 Ta=25°C. 1. FEATURES Low collector-to-emitter saturation voltage. Fast switching speed. Large current capacity and wide ASO. We declare that the material of product compliance withRoHS requirements and Halogen Free. datasheet search, datasheets, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes and other semiconductors

Saturation voltage of transistor All About Circuit

  1. Collector-Emitter Saturation Voltage VCE(sat) 1.0 1.0 V I C=100mA,IB=0.1mA* Base-Emitter Saturation Voltage VBE(sat) 1.5 1.5 V I C=100mA,IB=0.1mA* Static Forward Current Transfer Ratio hFE 4K 10K 20K 4K 2K 4K 10K 2K IC=100µA, VCE=1Vƒ IC=10mA, VCE=5V* IC=100mA, VCE=5V* IC=500mA, VCE=5V* Transition Frequency fT 170 Typical 170 Typical MHz IC=50mA, VCE=5V f = 20MHz Output Capacitance Cobo 3.5.
  2. NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage), BC338 datasheet, BC338 circuit, BC338 data sheet : SIEMENS, alldatasheet, datasheet, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs, and other semiconductors
  3. Collector to Emitter saturation voltage VCE(sat) Gate-emitter voltage at a specified collector current when a specified gate-emitter voltage is applied. Input capacitance Cies Gate-emitter capacitance at a specified gate-emitter voltage, specified collector -emitter voltage, and specified frequency. Output capacitance Coes Collector-emitter capacitance at a specified gate-emitter voltage.

The collector-emitter voltage is nearly equal to VCC At saturation, collector-base junction no longer remains reverse biased and normal transistor action is lost. If base current is greater than IB(sat), then collector current cannot increase because collector-base junction is no longer reverse-biased. (iii) Active region. The region between cut off and saturation is known as active region. voltage, emitter voltage, or collector voltage. But, we do know the differences in these voltages! For example, we know that the collector voltage is 0.2 V higher than the emitter voltage, but we do not know what the collector or emitter voltages are! 12/3/2004 Example A BJT Circuit in Saturation 4/7 4 Q: So, how the heck do we ANALYZE this circuit !? A: Often, circuits with BJTs in saturation. However, this collector-emitter saturation voltage will be fairly low, around several tenths of a volt, depending on the specific transistor used. For light exposure levels somewhere between zero and maximum solar cell output, the transistor will be in its active mode, and the output voltage will be somewhere between zero and full battery voltage. An important quality to note here about.

Collector to emitter voltage at saturation Calculator

Figure 5.2 Variations in collector current and collector-to-emitter voltage as a result of a variation in base current. [5] Assume a sinusoidal voltage, V in, is superimposed on V BB, causing the base current to vary sinusoidally 100 A above and below its Q-point value of 300 A. This causes the collector current (I C) to vary 10 mA above and below its Q-179 | P a g e point value of 30 mA. As a. The collector current (IC) is measured as a function of collector-emitter voltage (VCE) with the gate-emitter voltage (VGE) constant. Figure 5: Output I-V characteristics of an NPT-IGBT [IXSH 30N60B2D1] [3] A distinguishing feature of the characteristics is the 0.7V offset from the origin. The entire family of curves is translated from the origin by this voltage magnitude. It may be recalled. In the saturation region, the collector-base and base-emitter junctions are forward-biased. The input characteristics from the above figure reveal that for fixed values of collector voltage (V CB ), as the base-to-emitter voltage increases, the emitter current increases in a manner that closely resembles the diode characteristics Collector-emitter saturation voltage VCE(sat) IC=-800mA, IB=-80mA -0.5 V Base-emitter saturation voltage VBE(sat) IC=-800mA, IB=-80mA -1.2 V Base-emitter voltage VBE VCE=-1V, IC=-10mA -1 V Transition frequency fT VCE=-10V,IC=-50mA , f=30MHz 100 MHz Collector output capacitance Cob VCB=-10V, IE=0, f=1MHz 20 pF CLASSIFICATION OF h FE(1) RANK L H Collector-emitter saturation voltage VCE(sat) IF = 20mA, I C = 1mA - 0.1 0.2 V Isolation resistance RISO DC500V, 40 to 60%RH 5 x 1010 1011 - Ω Floating capacitance Cf V= 0, f= 1MHz - 0.6 1.0 pF Cut-off frequency fc VCE = 5V, I C = 2mA, R L = 100Ω, - 3dB - 80 - kHz Response time Rise time tr VCE = 2V, I C = 2mA, RL = 100Ω-4 18µs Fall time tf -3 18µs Vrms PC8 7AB PC8 7BC PC8 7CD PC8 7AC PC8.

Transistors - what is the collector/emitter voltage drop

  1. imum value of the common-base current gain of the transistor for the switching should be _____.Correct answer is between '0.89,0.91'. Can you explain this answer? are solved by group of students and teacher of GATE, which is also the largest student community of GATE. If the answer is.
  2. Clamping the collector voltage to 63 percent of the final value allows a factor of two speed increase. Basic idea. The Baker clamp introduces a nonlinear negative feedback into a common-emitter stage (BJT switch), with the purpose to avoid saturation by decreasing the gain near the saturation point. While the transistor is in active mode and it.
  3. Collector-emitter saturation voltage IC = 150 A VGE = 15 V VCE sat 1,40 1,48 1,50 1,60 V V V Tvj = 25°C Tvj = 125°C Tvj = 150°C Gate-Schwellenspannung Gate threshold voltage IC = 6,50 mA, VCE = VGE, Tvj = 25°C VGEth 4,35 5,10 5,85 V Gateladung Gate charge VGE = -15 / 15 V, VCE = 600 V QG 0,90 µC Interner Gatewiderstand Internal gate resistor Tvj = 25°C RGint 0,75 Ω Eingangskapazität.

Common Emitter Amplifier and Transistor Amplifier

  1. Collector-emitter saturation voltage V CE(sat) I C=100mA, I B=10mA 0.3 V Base-emitter saturation voltage V BE(sat) I C=100mA, I B=10mA 1 V Transition frequency f T V CE=6V,I C=10mA,f =30 MHz 200 MHz Collector output capacitance Cob V CB=10V,I E=0,f=1MH Z 3.0 pF Noise figure NF VCE=6V,IC=0.1mA RG=10kΩ,f=1kMHZ 10 dB CLASSIFICATION OF h FE(1) Rank O Y GR BL Range 70-140 120-240 200-400 350-700 1.
  2. Collector-Emitter Saturation Voltage VCE(SAT)IC=500mA, IB=50mA 0.5 V Base-Emitter Saturation Voltage VBE(SAT)IC=500mA, IB=50mA 1.2 V Base-Emitter Saturation Voltage VBE VCE=1V, IC=10mA 1.0 V Current Gain Bandwidth Product fT VCE=10V, IC=50mA 100 MHz Output.
  3. Collector-Emitter Saturation Voltage * VCE(sat)1 IC=-10mA, IB=-1mA - - -0.25 V VCE(sat)2 IC=-50mA, IB=-5mA - - -0.4 Base-Emitter Saturation Voltage * VBE(sat)1 IC=-10mA, IB=-1mA -0.65 - -0.85 V VBE(sat)2 IC=-50mA, IB=-5mA - - -0.95 Transition Frequency fT VCE=-20V, IC=-10mA, f=100MHz 250 - - MHz Collector Output Capacitance Cob VCB=-5V, IE=0, f=1MHz - - 4.5 pF Input Capacitance Cib VBE=-0.5V.

Transistor VCE (collector-emitter voltage) - General

  1. COLLECTOR Low Collector-Emitter Saturation Voltage Large Collector Power Dissipation and Current 3. EMITTER Mini Power Type Package MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 7 V . 0.13. 2sd965a.pdf Size:555K _htsemi. 2SD 965ATRANSISTOR (NPN) FEATURES SOT-89 Audio.
  2. Collector-Emitter Saturation Voltage VCE(SAT) IC =-500mA, IB =-50mA -0.5 V Base-Emitter Saturation Voltage VBE(SAT) IC =500mA, IB =-50mA -1.2 V Base-Emitter Saturation Voltage VBE VCE =-1V, IC =-10mA -1.0 V Current Gain Bandwidth Product fT VCE =-10V, IC =-50mA 100 MHz Output Capacitance Cob VCB =10V, IE =0, f =1MHz 9.0 p
  3. VCEO Collector-Emitter Voltage (IB = 0) 40 V VEBO Emitter-Base Voltage (IC = 0) 6 V IC Collector Current 200 mA Ptot Total Dissipation at TC = 25 oC 350 mW Tstg Storage Temperature -65 to 150 oC Tj Max. Operating Junction Temperature 150 oC 1/4. THERMAL DATA Rthj-amb • Thermal Resistance Junction-Ambient Max 357.1 oC/W • Device mounted on a PCB area of 1 cm 2 ELECTRICAL CHARACTERISTICS.
  4. BASE-EMITTER SATURATION VOLTAGE V BEsat (mV) COLLECTOR CURRENT I C (mA) I-500 Typical Characteristics S8550-500 β=10 T a = 2 5 ℃ T a = 1 0 0 ℃ C V CEsat —— COLLECTOR-EMITTER SATURATION VOLTAGE V CEsat (V) COLLECTOR CURRENT I C (mA) COMMON EMITTER V CE =-1V DC CURRENT GAIN h FE COLLECTOR CURRENT I C (mA) T a =25℃ T a =100℃ h FE —— I C 500-500 B,Jan,2012. Title: Microsoft Word.
  5. Collector-Emitter saturation voltage Base-Emitter saturation voltage *1 Switching time. 2 Characteristics 2SC2625 FUJI POWER TRANSISTOR Collector-Emitter voltage VCE[V] Collector Output Characteristics Collector current I C [A] DC Current Gain Collector current IC[A] D.C. current gain h FE Base and Collector Saturation Voltage Collector current IC[A] Saturation voltage V CE(sat), V BE(sat) [V.

When a value for the maximum possible collector current is considered, that point will be present on the Y-axis, which is nothing but the Saturation point. As well, when a value for the maximum possible collector emitter voltage is considered, that point will be present on the X-axis, which is the Cutoff point Collector-Emitter Saturation Voltage Figure 4. Current Gain Bandwidth Product 0 10 203040 50 0 10 20 30 40 50 60 70 80 90 100 I B = 160µA I B = 140µA I B = 120µA I B = 100µA I B = 80µA I B = 60µA I B = 40µA I B = 20µA I C [mA], COLLECTOR CURRENT V CE [V], COLLECTOR-EMITTER VOLTAGE 1 10 100 1000 10 100 1000 VCE = 5V h FE, DC CURRENT GAIN IC [mA], COLLECTOR CURRENT 1 10 100 1000 10 100. Collector Emitter Saturation Voltage (IC = 8 Adc, IB = 0.4 Adc) VCE(sat) 1 Vdc Base Emitter Saturation Voltage (IC = 8 Adc, IB = 0.8 Adc) VBE(sat) 1.5 Vdc DC Current Gain (VCE = 1 Vdc, IC = 2 Adc) (VCE = 1 Vdc, IC = 4 Adc) hFE 60 40 DYNAMIC CHARACTERISTICS Collector Capacitance (VCB = 10 Vdc, ftest = 1 Mhz) MJD44H11 MJD45H11 Ccb 45 130 pF Gain Bandwidth Product (IC = 0.5 Adc, VCE = 10 Vdc, f. US3226642A US116014A US11601461A US3226642A US 3226642 A US3226642 A US 3226642A US 116014 A US116014 A US 116014A US 11601461 A US11601461 A US 11601461A US 3226642 A US3226642 A US 3226642A Authority US United States Prior art keywords transistor measuring mode common saturation voltage Prior art date 1961-06-09 Legal status (The legal status is an assumption and is not a legal conclusion Base-emitter saturation voltage VBE(sat) IC=-800mA, IB=-80mA -1.2 V Base-emitter on voltage VBE(on) IC=-1V, VCE=-10mA -1 V Base-emitter positive favor voltage VBEF IB=-1A -1.55 V Transition frequency fT VCE= -10V, IC= -50mA f=30MHz 100 MHz output capacitance Cob (VCB=-10V,IE=0,f=1MHz) 20 pF SOT-23 1.BASE 2.EMITTER 3.COLLECTOR bluecolour. Page 2 f 3 REV01: 09/2011 Typical Characteristics.

Bipolar junction transistor - Wikipedi

Saturation region: The tap is fully opened. When considering only the base/emitter and collector/emitter, we can clearly establish the following loops : fig 3 : Voltage loops on a CEA configuration . From Figure 3 and using Kirchhoff's law of potential, we can easily write that : eq 1 : Static load relations. Only one power supply is usually found in CEA amplifiers and delivers a. Collector-emitter saturation voltage V CE(sat) I C=800mA, I B= 80mA 0.5 V Base-emitter saturation voltage V BE(sat) I C=800mA, I B= 80mA 1.2 V Transition frequency f T V CE=10V, I C= 50mA f=30MHz 100 MHz CLASSIFICATION OF hFE(1) Rank L H J Range 120-200 200-350 300-400 1. BASE SOT-23 2. EMITTER 3. COLLECTOR. Title: Microsoft Word - SS8050_SOT-23_.doc Author: Administrator Created Date: 8/24. Electrical Characteristics (Cont'd): (TA = +25 C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics DC Current Gain hFE VCE = 150mV, IC = 12mA 30 80 − VCE = 200mV, IC = 24mA 24 90 − Collector−Emitter Saturation Voltage VCE(sat) IC = 12mA, IB = 0.4mA − 0.09 0.15 V IC = 24mA, IB = 1mA − 0.09 0.20 V Base−Emitter Voltage VBE IC = 12mA, IB.

Current and Voltage Relationships in Bipolar Junction

BC846ALT1G Series www.onsemi.com 6 BC846B, SBC846B Figure 15. Collector Saturation Region IB, BASE CURRENT (mA) Figure 16. Base−Emitter Temperature Coefficient IC, COLLECTOR CURRENT (mA) 1.0 1. Collector-emitter saturation voltage V I C=100mA CE(sat) (V) −30 0 20 10040 60 80 Ambient temperature T a (˚C) Fig.8 Collector - emitter Saturation Voltage vs. Ambient Temperature 7 Fig.11 Test Circuit for Response Time Frequency f (kHz) 0 0.1 1 10 100 100Ω 10Ω Voltage gain A v (dB) R L=1kΩ 1 000 −5 −10 −15 −20 −25 V CE=2V I C=20mA T a=25˚C Fig.12 Frequency Response. BC327 datasheet, BC327 datasheets, BC327 pdf, BC327 circuit : SIEMENS - PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) ,alldatasheet, datasheet, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs, and other semiconductors BC338 datasheet, BC338 datasheets, BC338 pdf, BC338 circuit : SIEMENS - NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) ,alldatasheet, datasheet, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs, and other semiconductors

Transistors - learn

Collector-Emitter Saturation Voltage V CE(SAT) I C=-2A, I B=-0.2A -0.3 -0.5 V Base-Emitter Saturation Voltage V BE(SAT) I C=-2A, I B=-0.2A -1.0 -2.0 V Current Gain Bandwidth Product f T V CE=-5V, I C=-0.1A 80 MHz Output Capacitance C OB V CB=-10V, I E=0,f=1MHz 45 pF Note: Pulse test: P W ≤ 300μs, Duty Cycle ≤ 2% CLASSIFICATION OF h FE2 RANK Q P E RANGE 100 ~ 200 160 ~ 320 200 ~ 400. Collector-emitter saturation voltage IF = 20mA, I C = 1mA - 0.2 V Isolation resistance RISO 5x1010 - Ω Floating capacitance Cf V= 0, f= 1MHz - 0.6 1.0 pF Response time Rise time tr VCE = 2V, I C = 2mA RL = 100Ω-6 -µs-18µs Fall time-8 -µs-18µs Ptot Viso T opr T stg T sol - 30 to + 100 - 40 to + 125 Input Output Transfer-charac-teristics VCE(sat) 0.2mm or more Parameter Forward current.

Bipolar Junction Transistor or BJT2SD2012 datasheet - NPN Silicon Power TransistorFGPF4536 datasheet - Specifications: Input Type: StandardBD139-10 datasheet - NPN Silicon Transistors
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